View BDP94808_4911962.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BDP948, BDP950, BDP954
PNP Silicon AF Power Transistors * For AF driver and output stages * High collector current * High current gain * Low collector-emitter saturation voltage * Complementary types: BDP947, BDP949 BDP953 (NPN) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101
4 2 1
3
Type BDP948 BDP950 BDP954
Marking BDP948 1=B BDP950 1=B BCP954 1=B 2=C 2=C 2=C
Pin Configuration 3=E 3=E 3=E 4=C 4=C 4=C -
Package SOT223 SOT223 SOT223
1
2008-10-10
BDP948, BDP950, BDP954
Maximum Ratings Parameter Collector-emitter voltage BDP948 BDP950 BDP954 Collector-base voltage BDP948 BDP950 BDP954 Emitter-base voltage Collector current Peak collector current, tp 10 ms Base current Peak base current Total power dissipationTS 100 C VEBO IC I CM IB I BM Ptot Tj T stg VCBO
Symbol
VCEO
Value 45 60 100 45 60 120 5 3 5 200 500 5 150 -65 ... 150
Unit V
A mA W C
Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2)
1Pb-containing 2For
Symbol
RthJS
Value
10
Unit K/W
package may be available upon special request calculation of R thJA please refer to Application Note Thermal Resistance
2
2008-10-10
BDP948, BDP950, BDP954
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BDP948 IC = 10 mA, IB = 0 , BDP950 IC = 10 mA, IB = 0 , BDP954 V(BR)CEO
Symbol min.
Values typ. max.
Unit
V 45 60 100 A 0.1 20 100 nA 25 85 50 15 475 0.5 1.3 V
Collector-base breakdown voltage
IC = 100 A, IE = 0 , BDP948 IC = 100 A, IE = 0 , BDP950 IC = 100 A, IE = 0 , BDP954
V(BR)CBO
45 60 120
V(BR)EBO I CBO
Emitter-base breakdown voltage
IE = 10 A, IC = 0
5
Collector-base cutoff current
VCB = 45 V, IE = 0 VCB = 45 V, IE = 0 , TA = 150 C
Emitter-base cutoff current
VEB = 4 V, IC = 0
I EBO h FE
-
DC current gain1)
IC = 10 mA, VCE = 5 V IC = 500 mA, V CE = 1 V IC = 1 A, VCE = 2 V BDP948,BDP950
BDP954
IC = 1 A, VCE = 2 V
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
VCEsat VBEsat
-
Base emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 100 MHz
1Pulse
fT Ccb
-
100 40
-
MHz pF
test: t < 300s; D < 2%
3
2008-10-10
BDP948, BDP950, BDP954
DC current gain hFE = (IC) VCE = 2 V
10 3
Collector-emitter saturation voltage IC = (VCEsat), hFE = 10
10 4
mA
-
10 3
h FE
IC
10
2
10
2
100C 25C -50C
100 C 25 C -50 C
10 1
10 1 0 10
10
1
10
2
10
3
mA 10
4
10 0 0
0.1
0.2
0.3
0.4
V
0.6
IC
VCEsat
Base-emitter saturation voltage IC = (V BEsat), hFE = 10
10 4
mA
Collector current I C = (VBE) VCE = 2 V
10 4
mA
10 3
10 3
10 2
-50C 25C 100C
-50C 25C 100C
10 2
IC
10 1
IC
10 1 10 0 0
10 0 0
0.2
0.4
0.6
0.8
1
V
1.3
0.2
0.4
0.6
0.8
1
V
1.3
VBEsat
VBE
4
2008-10-10
BDP948, BDP950, BDP954
Collector cutoff current ICBO = (TA) VCB = 45 V
10 5 nA 10 4
Collector-base capacitance Ccb = (V CB) Emitter-base capacitance Ceb = (VEB)
425
pF
350
CCB(C EB)
I CB0
10 3
max
300 250 200 150
CEB
10 2
10 1
typ
100 10 0 50
CCB
10
-1
0
20
40
60
80
100
120 C
150
0 0
4
8
12
16
V
22
TA
VCB(VEB)
Total power dissipation Ptot = (TS)
Permissible Pulse Load RthJS = (t p)
5.5
W
10 2
4.5 4
RthJS
Ptot
10 1
3.5 3 2.5 2 1.5 1 0.5 0 0 15 30 45 60 75 90 105 120 C 150
10 0
D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
ts
tp
5
2008-10-10
BDP948, BDP950, BDP954
Permissible Pulse Load Ptotmax/P totDC = (tp)
10 3
P totmax/P totDC
-
10 2
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
6
2008-10-10
Package SOT223
BDP948, BDP950, BDP954
Package Outline
A
6.5 0.2 3 0.1
4
1.60.1 0.1 MAX.
15 MAX.
B
3.5 0.2
1
2
3
7 0.3
0.7 0.1 4.6 0.25 M A
2.3
0.5 MIN.
0.28 0.04
0...10
Foot Print
0.25 M B
3.5
1.4
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW Date code (YYWW) BCP52-16 Type code
Pin 1
Packing
Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel
1.4
4.8
8
0.3 MAX.
7.55 12
Pin 1
6.8
1.75
7
2008-10-10
BDP948, BDP950, BDP954
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
8
2008-10-10

▲Up To Search▲

Price & Availability of BDP94808

	To Download BDP94808 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .